期刊名称：International Journal of Multimedia and Ubiquitous Engineering
印刷版ISSN：1975-0080
出版年度：2016
卷号：11
期号：5
页码：21-30
DOI：10.14257/ijmue.2016.11.5.03
出版社：SERSC
摘要：A three-dimensional and time-dependent turbulent mathematical model is established for the mass, heat, momentum and dopant transport in the LEC melt of In-doped GaAs. The Solution scheme for the dopant segregation effect at the melt/crystal interface is put forward. Grid testing calculations have been performed for the choice of the grid. The turbulent mathematical model and numerical methodology are used to simulate the melt convections and dopant transports in the previously published experiments, and the numerical accuracy is validated by comparing the results with the experimental data in different model setups. Some transport characteristics in the LEC melt of In-doped GaAs have been concluded. Owing to the interacting forces associated with different length scales in the LEC melt, the fluid flow is non-axisymmetric. Because of the competition between buoyancy, Marangoni force, centrifugal force and the Coriolis force, the temperature fluctuates in the melt. Due to the segregation, the InAs concentration increase in the axial direction.
关键词：Computer simulation; transport characteristics; LEC melt; In-doped GaAs
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