期刊名称：TELKOMNIKA (Telecommunication Computing Electronics and Control)
印刷版ISSN：2302-9293
出版年度：2016
卷号：14
期号：3
页码：867-872
DOI：10.12928/telkomnika.v14i3.3644
语种：English
出版社：Universitas Ahmad Dahlan
摘要：CuInAlSe 2 (CIAS) thin films were prepared using pulsed laser deposition (PLD) and selenization. The PLD process utilized a certain kind of stacking order to deposit elemental films on glass substrates, layer by layer, for precursor preparation. They were designed to be Al- and Cu-deficient and selenized using two different heat treatment steps. According to its precursor compositional ratio, stacking order, and heat treatment, each CIAS film showed different properties and a critical condition. The crystalline phases, compositional ratio, morphology, and optical-electrical properties of the CIAS films are discussed here.
其他摘要：CuInAlSe 2 (CIAS) thin films were prepared using pulsed laser deposition (PLD) and selenization. The PLD process utilized a certain kind of stacking order to deposit elemental films on glass substrates, layer by layer, for precursor preparation. They were designed to be Al- and Cu-deficient and selenized using two different heat treatment steps. According to its precursor compositional ratio, stacking order, and heat treatment, each CIAS film showed different properties and a critical condition. The crystalline phases, compositional ratio, morphology, and optical-electrical properties of the CIAS films are discussed here.
