摘要：Deep level transient spectroscopy (DLTS) was used to characterize the electron traps present in the bulk GaAs grown by molecular beam epitaxy (MBE) on on-axis (100) and off-axis (4° towards the (111) A direction) substrates. Two electron traps were obtained for each sample having identical corresponding peak locations in the DLTS spectra. The layer grown on the on-axis substrate has electron traps with activation energies of EC–0.454 eV and EC–0.643 eV and capture cross-sections of 1.205 x 10-14 cm2 and 3.88 x 10-15 cm2, respectively. The layer grown on the off-axis substrate has traps with activation energies of EC–0.454 eV and EC–0.723 eV and capture cross-sections of 2.060 x 10-14 cm2 and 4.40 x 10-14 cm2. The electron traps are possibly the M4 (or EL3) and EL2 (or EB4) traps commonly found in GaAs layers. Due to the high trap concentrations obtained and to the non-uniform trap concentration profile, As desorption may be considerable during growth.
