期刊名称：International Journal of Electrical and Computer Engineering
电子版ISSN：2088-8708
出版年度：2016
卷号：6
期号：4
页码：1717-1724
DOI：10.11591/ijece.v6i4.pp1717-1724
语种：English
出版社：Institute of Advanced Engineering and Science (IAES)
摘要：Advancement in the wireless industry, internet access without borders and increasing demand for high data rate wireless digital communication moving us toward the optimal development of communication technology. Wireless communication is a technology that plays an important role in current technology transformation. Broadband communication is a method of telecommunication that are available for transmitting large amounts of data, voice and video over long distance using different frequencies. Specifically, Low Noise Amplifier which is located at the first block of receiver system, makes it one of the important element in improving signal transmition. This study was aimed to design a microwave Low Noise Amplifier for wireless application that will work at 5.8 GHz using high-performance low noise superHEMT transistor FHX76LP manufactured by Eudyna Technologies. The low noise amplifier (LNA) produced gain of 16.8 dB and noise figure (NF) of 1.20 dB. The input reflection (S11) and output return loss (S22) are -10.5 dB and -13.3 dB respectively. The bandwidth of the amplifier recorded is 1.2 GHz. The input sensitivity is compliant with the IEEE 802.16 standards.
其他摘要：Advancement in the wireless industry, internet access without borders and increasing demand for high data rate wireless digital communication moving us toward the optimal development of communication technology. Wireless communication is a technology that plays an important role in current technology transformation. Broadband communication is a method of telecommunication that are available for transmitting large amounts of data, voice and video over long distance using different frequencies. Specifically, Low Noise Amplifier which is located at the first block of receiver system, makes it one of the important element in improving signal transmition. This study was aimed to design a microwave Low Noise Amplifier for wireless application that will work at 5.8 GHz using high-performance low noise superHEMT transistor FHX76LP manufactured by Eudyna Technologies. The low noise amplifier (LNA) produced gain of 16.8 dB and noise figure (NF) of 1.20 dB. The input reflection (S 11 ) and output return loss (S 22 ) are -10.5 dB and -13.3 dB respectively. The bandwidth of the amplifier recorded is 1.2 GHz. The input sensitivity is compliant with the IEEE 802.16 standards.
关键词：Telecommunication;LNA; Radio Frequency; Ladder -Matching Network
