期刊名称：Journal of Theoretical and Applied Information Technology
印刷版ISSN：1992-8645
电子版ISSN：1817-3195
出版年度：2013
卷号：51
期号：3
出版社：Journal of Theoretical and Applied
摘要：The design of a semiconductor component such as semiconductor optical amplifiers (SOAs) necessarily needs to go through a phase of modeling which allows studying a theoretical characterization of the SOA and anticipating its reactions on the basis of the operating conditions. This will ensure a qualitative prediction of most accurate performance of the SOA. The development of a theoretical model is a multidisciplinary activity that needs engineering skills, optimization and physics. In this paper, we propose a numerical algorithm which enables the efficient implementation of the model, by the means of the finite difference method (FDM) and the rate equations. The model can be used to investigate the effects of different material and geometrical parameters on SOA characteristics. It is found that at low input optical power, the carrier density has a symmetrical spatial distribution, while at high input optical power, the carrier density spatial distribution becomes more asymmetrical. For input optical powers less than -25 dBm, the gain of the amplifier remains constant for different values of the molar fraction of arsenide and it reaches the maximum when y = 0.892. In our study, among the aspects of the importance of SOA is the use of an electrical controlled optical gate when the cavity lengths are great and the values of the molar fraction of arsenide are low. Using this model, our simulation results go in accordance with some published results for SOAs.
