期刊名称：Journal of Theoretical and Applied Information Technology
印刷版ISSN：1992-8645
电子版ISSN：1817-3195
出版年度：2015
卷号：77
期号：3
出版社：Journal of Theoretical and Applied
摘要：Short-channel devices are preferred for realizing millimetre circuits, but these are affected by the short-channel effects (SCE). Multi-Gate (MG) MOSFET is found to be an alternative to overcome this drawback. In this paper, study and analysis of DC and AC parameters of MG MOSFETs have been attempted and small signal gain (y21) of multi-gate structure is analytically derived. Design of low noise amplifier (LNA) at 60 GHz using the channel charging resistance model has been done.Small signal gain and noise figure using the channel charging resistance model has been derived and analysed. The proposed LNA circuit uses various multi-gate MOSFET structures and the results are compared with conventional MOSFET based design. The designed LNA using a Quadruple Gate structure exhibited the noise figure improvement of 24.4% and 42.79% when operated at 1 V and 1.5 V respectively. Also the corresponding gain increases by 2.38 times and 4.9 times compared with conventional single gate MOSFET design.
关键词：60 Ghz; Low Noise Amplifier; Multi-Gate (MG) MOSFET; Small Signal Gain; Channel Charging Resistance Model
