标题：Novel High Frequency Silicon Carbide Static Induction Transistor-Based Test-Bed for the Acquisition of SiC Power Device Reverse Recovery Characteristics
摘要：A test system is presented that utilizes a high-frequency Silicon Carbide (SiC) Static Induction Transistor (SIT) in place of the traditional MOSFET to test reverse recovery characteristics for the new class of SiC power diodes. An easily implementable drive circuit is presented that can drive the high-frequency SIT. The SiC SIT is also compared to a commonly used Si MOSFET in the test circuit application.
