摘要：Possible Health Hazards Associated with the Use of Toxic Metals in Semiconductor Industries: Swaran J.S. FLORA. Division of Pharmacology and Toxicology, Defence Research and Development Establishment, Gwalior, India —Gallium Arsenide (GaAs), Indium Arsenide (InAs) and Indium Phosphide (InP) are the intermetallic compounds that are recognised as a potential health risk to workers occupationally exposed to their dust. Exposure to these semiconductor compounds in the microelectronic industry can occur during the preparation of material, cleaning and maintenance operations for quartz glassware and during cleaning of the reactor. The toxic effect of the intermetallic semiconductors appears to occur due to inhalation or oral exposure and may result in poisoning. Assessment of risk to workers engaged in GaAs/InAs production is difficult due to the lack of data on the toxicity of these compounds. Their toxicity is mainly estimated on the basis of inorganic arsenic because it is now well known that GaAs and InAs dissociate into their constitute moieties and exert adverse effects on the haematopoietic and immune systems. As their toxicity is still not very well understood the treatment also remains to be elucidated.
