出版社：The Institute of Image Information and Television Engineers
摘要：Device simulation of polycrystalline-silicon thin-film transistors (TFTs) was carried out with trap states at front and back oxide interfaces. First, the trap densities at the front oxide interface (Dfr) and at the back oxide interface (Dbk) were extracted from actual transistor characteristics. Next, the dependence of transistor characteristics on the Dfr and Dbk was then analyzed Using a 2-D device simulator by varying the Dfr and Dbk from the standard Dfr and Dbk. It was found that both the Dfr and Dbk influenced the subthreshold swing and threshold voltage. However, neither the Dfr nor Dbk had much influence on transistor mobility. It was necessary to simultaneously reduce both the Dfr and Dbk to product excellent poly-Si TFTs.
关键词：Device simulation;Polycrystalline-silicon;Thin-film transistor;Trap state;Front and back;Oxide interface
