期刊名称：Facta universitatis - series: Electronics and Energetics
印刷版ISSN：0353-3670
电子版ISSN：2217-5997
出版年度：2016
卷号：29
期号：4
页码：509-541
DOI：10.2298/FUEE1604509P
出版社：University of Niš
摘要：This paper presents a study of MOSFETs as a sensor and dosimeter of ionizing radiation. The electrical signal used as a dosimetric parameter is the threshold voltage. The functionality of these components is based on radiation-induced ionization in SiO2, which results in increase of positive charge trapped in the SiO2 and interface traps at Si-SiO2, leads to change in threshold voltage. The first part of the paper deals with analysis of defect precursors created by ionizing radiation, responsible for creation of fixed and switching traps, as well as most important techniques for their separation. Afterwards, the results for sensitive p-channel MOSFETs (RADFETs) are presented, following with results for commercially available MOSFETs applications as a sensors of ionizing radiation. [Projekat Ministarstva nauke Republike Srbije, br. 32026]
关键词：Fixed traps; fading; MOSFET; RADFET; switching traps; threshold voltage shift
