期刊名称：Facta universitatis - series: Electronics and Energetics
印刷版ISSN：0353-3670
电子版ISSN：2217-5997
出版年度：2016
卷号：29
期号：4
页码：647-651
DOI：10.2298/FUEE1604647L
出版社：University of Niš
摘要：Transient voltage suppressor (TVS) has been widely used for electronic system ESD protection. A good TVS is usually costive as it needs some special processes and extra masking layers for fabrication. A novel TVS design based on the standard CMOS process will be much more attractive. This work proposes a new TVS device using a CMOS compatible diode-triggered silicon controlled rectifier (DLVTSCR) as the core device. Due to the availability of multiple trigger mechanisms and the dual current paths for bypassing the ESD current, the newly proposed device is able to sink an ESD current of over 10 A. In addition, the holding voltage is promoted up to 6.83 V and the trigger voltage is lowered down to 10.8 V which is well suited for most portable device applications.
