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  • 标题:Very high growth rate chemical vapor deposition of single-crystal diamond
  • 本地全文:下载
  • 作者:Chih-shiue Yan ; Yogesh K. Vohra ; Ho-kwang Mao
  • 期刊名称:Proceedings of the National Academy of Sciences
  • 印刷版ISSN:0027-8424
  • 电子版ISSN:1091-6490
  • 出版年度:2002
  • 卷号:99
  • 期号:20
  • 页码:12523-12525
  • DOI:10.1073/pnas.152464799
  • 语种:English
  • 出版社:The National Academy of Sciences of the United States of America
  • 摘要:Diamond possesses extraordinary material properties, a result that has given rise to a broad range of scientific and technological applications. This study reports the successful production of high-quality single-crystal diamond with microwave plasma chemical vapor deposition (MPCVD) techniques. The diamond single crystals have smooth, transparent surfaces and other characteristics identical to that of high-pressure, high-temperature synthetic diamond. In addition, the crystals can be produced at growth rates from 50 to 150 {micro}m/h, which is up to 2 orders of magnitude higher than standard processes for making polycrystalline MPCVD diamond. This high-quality single-crystal MPCVD diamond may find numerous applications in electronic devices as high-strength windows and in a new generation of high-pressure instruments requiring large single-crystal anvils.
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