期刊名称:Proceedings of the National Academy of Sciences
印刷版ISSN:0027-8424
电子版ISSN:1091-6490
出版年度:2009
卷号:106
期号:15
页码:6065-6070
DOI:10.1073/pnas.0811923106
语种:English
出版社:The National Academy of Sciences of the United States of America
摘要:The development of solution-processable, high-performance n-channel organic semiconductors is crucial to realizing low-cost, all-organic complementary circuits. Single-crystalline organic semiconductor nano/microwires (NWs/MWs) have great potential as active materials in solution-formed high-performance transistors. However, the technology to integrate these elements into functional networks with controlled alignment and density lags far behind their inorganic counterparts. Here, we report a solution-processing approach to achieve high-performance air-stable n-channel organic transistors (the field-effect mobility ({micro}) up to 0.24 cm2/Vs for MW networks) comprising high mobility, solution-synthesized single-crystalline organic semiconducting MWs ({micro} as high as 1.4 cm2/Vs for individual MWs) and a filtration-and-transfer (FAT) alignment method. The FAT method enables facile control over both alignment and density of MWs. Our approach presents a route toward solution-processed, high-performance organic transistors and could be used for directed assembly of various functional organic and inorganic NWs/MWs.
关键词:organic semiconductors ; single crystals ; solution processing ; alignment