标题：ANALYTICAL MODEL OF THE THRESHOLD VOLTAGE VTH, SUBTHRESHOLD SWING AND DRAIN INDUCED BARRIER LOWERING (DIBL) FOR A NEW DEVICE STRUCTURE OF CYLINDRICAL GATE MOSFET
期刊名称：Journal of Theoretical and Applied Information Technology
印刷版ISSN：1992-8645
电子版ISSN：1817-3195
出版年度：2017
卷号：95
期号：6
出版社：Journal of Theoretical and Applied
摘要：In this work, 2D analytical and numerical modeling of surface potential, threshold voltage Vth and drain induced barrier lowering (DIBL) for a new structure of surrounding gate MOSFET are presented. This new structure obtained by combined dual material gate graded channel and dual oxide thickness shows good immunity in the nanoscale regime versus short channel effects (SCE). The characteristic of the new model are investigated in terms of surface potential, threshold voltage and DIBL. The results of simulation show that the use of two oxide thickness with the small thickness at the source side could significantly reduce short channel effects such as threshold voltage, and DIBL. It is also revealed that a lowering gate oxide thickness, a small silicon channel radius are needed to improve device characteristic. Analytical models for all parameters are validated using a rigorous numerical calculation and compared to others devices engineering.
