期刊名称：Journal of Theoretical and Applied Information Technology
印刷版ISSN：1992-8645
电子版ISSN：1817-3195
出版年度：2017
卷号：95
期号：10
出版社：Journal of Theoretical and Applied
摘要：At present, the 3-D IC integration utilizes Through Silicon Vias (TSVs) and it increased tremendous energy. The structure of the TSV composed of Cu, isolating liner and the silicon substrate. The isolating liner is encompassed signal TSV to stay away from signal leakage from TSV to the silicon substrate. In the conventional TSV structures, Sio2 is utilized as an isolating liner on account of its material compatibility with thesilicon substrate. To contrast to that several researchers had reported the issues of Sio2. Due to the high dielectric constant to such an extent that it brings about increasing of delay. Subsequently, Sio2 is not appropriate for elite applications. In this paper, we utilized polymer liner as isolating liner in place of Sio2. We simulated the performance analysis for both conventional and proposed TSV structures by varying radius and height of TSV. The proposed TSV structure simulation shows better results compared to conventional TSV structure.
关键词：Delay; Height; Power; Radius; Through-Silicon Via (TSV).
