摘要：Usually a buffer layer of cadmium sulphide is used in high efficiency solar cells based on Cu(In,Ga)Se 2 (CIGS). Because of cadmium toxicity, many in-vestigations have been conducted to use Cd-free buffer layers. Our work focuses on this type of CIGS-based solar cells where CdS is replaced by a ZnS buffer layer. In this contribution, AFORS-HET software is used to simulate n-ZnO: Al/i-ZnO/n-ZnS/p-CIGS/Mo polycrystalline thin-film solar cell where the key parts are p-CIGS absorber layer and n-ZnS buffer layer. The characteristics of these key parts: thickness and Ga-content of the absorber layer, thickness of the buffer layer and doping concentrations of absorber and buffer layers have been investigated to optimize the conversion efficiency. We find a maximum conversion efficiency of 26% with a short-circuit current of 36.9 mA/cm 2 , an open circuit voltage of 824 mV, and a fill factor of 85.5%.
关键词：Cu(In1-xGax)Se2;Thin-Film Solar Cell;Numerical Modeling;AFORS-HET Simulation;Optimization
