期刊名称：Facta universitatis - series: Electronics and Energetics
印刷版ISSN：0353-3670
电子版ISSN：2217-5997
出版年度：2017
卷号：30
期号：3
页码：375-382
出版社：University of Niš
摘要：Investigation of mixed mode performances for GaAs UTB-MOSFET at nanoscale regime keeping in view of "Beyond CMOS" is the current trend of semiconductor industry. Here it is proposed to modify conventional models by considering an extra Insulator Region (IR) and Undoped Buried oxide Region (UBR) to study the performance related to digital and analog/RF applications. Here a GaAs is considered as the channel material. The IR-UTB-SOI-n-MOSFET has shown promising results with respect to SS, DIBL, fT and switching speed.
关键词：Silicon-On-Insulator; UTB MOSFET; GaAs; DIBL; Analog/RF Performance; Insulator Region
