期刊名称：Facta universitatis - series: Electronics and Energetics
印刷版ISSN：0353-3670
电子版ISSN：2217-5997
出版年度：2017
卷号：30
期号：4
页码：511-548
出版社：University of Niš
摘要：In this paper conduction mechanisms which could govern the electron transport through high-k dielectrics are summarized. The influence of various factors - the type of high-k dielectric and its thickness; the doping with a certain element; the type of metal electrode as well as the measurement conditions (bias, polarity and temperature), on the leakage currents and dominant conduction mechanisms have been considered. Practical hints how to consider different conduction mechanisms and to differentiate between them are given. The paper presents an approach to assess important trap parameters from investigation of dominant conduction mechanisms.
关键词：high-k dielectrics; conduction mechanisms; electrically active defects
