Highly evanescent waveguides with a subwavelength core thickness present a promising lab-on-chip solution for generating nanovolume trapping sites using overlapping evanescent fields. In this work, we experimentally studied Si₃N₄ waveguides whose sub-wavelength cross-sections and high aspect ratios support fundamental and higher order modes at a single excitation wavelength. Due to differing modal effective indices, these co-propagating modes interfere and generate beating patterns with significant evanescent field intensity. Using near-field scanning optical microscopy (NSOM), we map the structure of these beating modes in three dimensions. Our results demonstrate the potential of NSOM to optimize waveguide design for complex field trapping devices. By reducing the in-plane width, the population of competing modes decreases, resulting in a simplified spectrum of beating modes, such that waveguides with a width of 650 nm support three modes with two observed beats. Our results demonstrate the potential of NSOM to optimize waveguide design for complex field trapping devices.