摘要：Direct growth of uniform wafer-scale two-dimensional (2D) layered materials using a universal method is of vital importance for utilizing 2D layers into practical applications. Here, we report on the structural and transport properties of large-scale few-layer MoS2 back-gated field effect transistors (FETs), fabricated using conventional pulsed laser deposition (PLD) technique. Raman spectroscopy and transmission electron microscopy results confirmed that the obtained MoS2 layers on SiO2/Si substrate are multilayers. The FETs devices exhibit a relative high on/off ratio of 5 × 102 and mobility of 0.124 cm2V−1S−1. Our results suggest that the PLD would be a suitable pathway to grow 2D layers for future industrial device applications.
