期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2017
卷号：6
期号：12
页码：22279
DOI：10.15680/IJIRSET.2017.0612007
出版社：S&S Publications
摘要：Etching the large area of sacrificial layer under the microstructure to be released is a common methodused in microelectromechanical systems technology. In order to completely release the microstructures, many etchingholes are often required on the microstructure to enable the etchant to completely etch the sacrificial layer. However,the etching holes often alter the electromechanical properties of the micro devices, especially capacitive devices,because the fringe fields induced by the etching holes can significantly alter the electrical properties. This article isaimed at evaluating the fringe field capacitance caused by etching holes on microstructures. The authors aim to find ageneral capacitance compensation the fringe capacitance of etching holes by the use of COMSOL simulation.According to the simulation results, the design of a capacitive structure with small etching holes is recommended toprevent an extreme capacitance decrease. The dimensions of the sphere truncates the modelling space. This paperstudies the dimensions of this air domain and its impact upon the capacitance and effect of etching holes of differentwidth. To analyze the impact of fringing field during a capacitance and during the etching holes, we've got design a 2capacitive models one could be a rectangular model and another could be a rectangular model with different widths ofetching holes between the plates of the capacitance.
