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  • 标题:Origin of radiation tolerance in amorphous Ge2Sb2Te5 phase-change random-access memory material
  • 作者:Konstantinos Konstantinou ; Tae Hoon Lee ; Felix C. Mocanu
  • 期刊名称:Proceedings of the National Academy of Sciences
  • 印刷版ISSN:0027-8424
  • 电子版ISSN:1091-6490
  • 出版年度:2018
  • 卷号:115
  • 期号:21
  • 页码:5353-5358
  • DOI:10.1073/pnas.1800638115
  • 语种:English
  • 出版社:The National Academy of Sciences of the United States of America
  • 摘要:The radiation hardness of amorphous Ge2Sb2Te5 phase-change random-access memory material has been elucidated by ab initio molecular-dynamics simulations. Ionizing radiation events have been modeled to investigate their effect on the atomic and electronic structure of the glass. Investigation of the short- and medium-range order highlights a structural recovery of the amorphous network after exposure to the high-energy events modeled in this study. Analysis of the modeled glasses reveals specific structural rearrangements in the local atomic geometry of the glass, as well as an increase in the formation of large shortest-path rings. The electronic structure of the modeled system is not significantly affected by the ionizing radiation events, since negligible differences have been observed before and after irradiation. These results provide a detailed insight into the atomistic structure of amorphous Ge2Sb2Te5 after irradiation and demonstrate the radiation hardness of the glass matrix.
  • 关键词:radiation damage ; phase-change memory ; molecular dynamics ; stochastic boundary conditions ; thermal spike
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