文章基本信息

标题：Origin of radiation tolerance in amorphous Ge2Sb2Te5 phase-change random-access memory material
作者：Konstantinos Konstantinou ; Tae Hoon Lee ; Felix C. Mocanu 等
期刊名称：Proceedings of the National Academy of Sciences
印刷版ISSN：0027-8424
电子版ISSN：1091-6490
出版年度：2018
卷号：115
期号：21
页码：5353-5358
DOI：10.1073/pnas.1800638115
语种：English
出版社：The National Academy of Sciences of the United States of America
摘要：The radiation hardness of amorphous Ge₂Sb₂Te₅ phase-change random-access memory material has been elucidated by ab initio molecular-dynamics simulations. Ionizing radiation events have been modeled to investigate their effect on the atomic and electronic structure of the glass. Investigation of the short- and medium-range order highlights a structural recovery of the amorphous network after exposure to the high-energy events modeled in this study. Analysis of the modeled glasses reveals specific structural rearrangements in the local atomic geometry of the glass, as well as an increase in the formation of large shortest-path rings. The electronic structure of the modeled system is not significantly affected by the ionizing radiation events, since negligible differences have been observed before and after irradiation. These results provide a detailed insight into the atomistic structure of amorphous Ge₂Sb₂Te₅ after irradiation and demonstrate the radiation hardness of the glass matrix.
关键词：radiation damage ; phase-change memory ; molecular dynamics ; stochastic boundary conditions ; thermal spike