期刊名称：International Journal of Innovative Research in Computer and Communication Engineering
印刷版ISSN：2320-9798
电子版ISSN：2320-9801
出版年度：2017
卷号：5
期号：4
页码：6816
DOI：10.15680/IJIRCCE.2017.0504034
出版社：S&S Publications
摘要：The designed InAs/ sihetrojunction double gate tunnel FET (H-DGTFET) is a type of tunnel FET whichonly gives a moderate performance enhancement in MOSFET technology. Through this project we can improve theperformance enhancement of InAs/Si. For this we analyse the threshold voltage, gate dielectric, channel length. Herethe threshold voltage of the device is extracted by using a constant current method. DC characteristics and analog RFperformance are investigated for different doping profiles. A highly doped layer is placed in the channel near thesource- channel junction, and this decrease the width the depletion region ,which improves the ON-current (Ion) andthe RF performance further more we use Tunnel FETs with a high-k gate dielectric which have a smaller thresholdvoltage shift than those using Sio2,while the threshold slope for fixed values of Vg remains nearly unchanged .herethree types of tunnel fets are simulated. homogeneous structure ,heterogeneous structure and pnpn model of tunnelfetare the main three structures. Comparing these structure different doping will give much more current and highperformance characteristics. Through this a new novel model of tunnelfet structure has been simulated.
