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  • 标题:Design of CMOS Operational Amplifier in 180nm Technology
  • 本地全文:下载
  • 作者:Sonu Kumar ; Anjali sharma ; Payal Jangra
  • 期刊名称:International Journal of Innovative Research in Computer and Communication Engineering
  • 印刷版ISSN:2320-9798
  • 电子版ISSN:2320-9801
  • 出版年度:2017
  • 卷号:5
  • 期号:4
  • 页码:8779
  • DOI:10.15680/IJIRCCE.2017.05040310
  • 出版社:S&S Publications
  • 摘要:In this paper we have presented a method for designing a Two Stage CMOS Operational Amplifierusing Cadence Virtuoso 180nm CMOS Technology. Complementary metal oxide semiconductor technology is used forconstructing integrated circuits. This technology is preferred to design opamp as CMOS devices are high noiseimmune and consume low static power. An operational amplifier is a DC-coupled high-gain electronicvoltage amplifier with a differential input and, usually, a single-ended output. Operational amplifiers used to performmathematical operations in many linear, non-linear and frequency-dependent circuits. Op-amp is widely used as abuilding block in integrated circuits is due to its versatility. Different operational parameters are discussed in this paper.The trade-off curves are computed between various characteristics such as Gain, Phase Margin, Gain Bandwidth,Common Mode Rejection Ratio, Power dissipation etc.
  • 关键词:Operational amplifier; Bandwidth; Gain; Power dissipation; CMMR
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