期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2016
卷号：5
期号：8
页码：14688
DOI：10.15680/IJIRSET.2016.0508081
出版社：S&S Publications
摘要：Porous silicon (PSi) layers were fabricated on n-type crystalline silicon (Si) wafers of (100) orientationsusing photo-electrochemical etching (PECE) process at etching time of (1, 2, and 3 min), current density of 5 mA/cm2,incident laser intensity of (5 mW) for blue laser (442 nm) and fixed electrolyte solution HF concentration (25%).Nanopores with an average diameter of 2.5 μm were formed in the n-PS (100) layer. These nanopores increased theporosity of the material to 52% for one- minute etching time compared with 55% porosity for 2-mintue etching timeand 65% for sample prepared at 3-mintue. A greater red shift luminescence was observed in the sample prepared at 3-mintue with those of the other samples. The lowest effective reflectance was obtained with one- minute etching time(PSi) layer that exhibited excellent light-trapping at wavelengths ranging from 450 to 750 nm. Solar cells werefabricated based on the (PSi) anti-reflection coating (ARC) layers. The current-voltage characteristics of the solar cellswere examined under 100 mW/cm2 illumination. A highly efficient (5.08%) solar cell was obtained with one- minuteetching time layer compared with those solar cells with other layer types
关键词：Porous silicon; photo-electrochemical etching; solar cells; antireflection.
