期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2016
卷号：5
期号：12
页码：21056
DOI：10.15680/IJIRSET.2016.0512158
出版社：S&S Publications
摘要：In this paper we have a tendency to analyse the chances of making a universal non-volatile memoryin anear future. Unlike electric charge storing DRAM and flash memories, an alternative principles of charge-storagememories are required. Increasing leakage power for SRAM and DRAM and the increasing refresh dynamic power forDRAM have posed challenges to circuit and architecture designers of future memory hierarchy designs Emergingmemory technologies— such as resistive RAM (RRAM), phase-change RAM (PCRAM), and spin- transfer torqueRAM (ST T-RAM) — are being explored as potential alternatives to existing memories and also exhibit lowoperational voltages, low power consumption, high operation speed, long retention time, high endurance, and an easystructure.
