期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2017
卷号：6
期号：4
页码：5182
DOI：10.15680/IJIRSET.2017.0604012
出版社：S&S Publications
摘要：This paper show a simple model for fabrication process of Super junction power MOSFET. The devicedimensions, different regions, appropriate materials for each regions etc. are taken from literature to achieve desiredproperty accordingly. The benefit for such type of modelling is to make fabrication process steps easier to understand.On the basis of some specific parameters like on-state resistance, break down voltage etc. a comparative study is alsodone to illustrate, the basic differences in Conventional Power MOS with Super junction Power MOS.
