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  • 标题:Strain Effect on InGaN/GaN Quantum Well
  • 本地全文:下载
  • 作者:Soumen Sen ; Aishwerya Anu
  • 期刊名称:International Journal of Innovative Research in Science, Engineering and Technology
  • 印刷版ISSN:2347-6710
  • 电子版ISSN:2319-8753
  • 出版年度:2017
  • 卷号:6
  • 期号:5
  • 页码:9617
  • DOI:10.15680/IJIRSET.2017.0605292
  • 出版社:S&S Publications
  • 摘要:The strains are calculated from the In mole fraction and lattice constants.The parameters implicityinvolved are elastic stiffness constants(C11 and C22),The hydrostatic deformation potential of the conduction band(a’)and the hydrostatic deformation potential(a) and shear deformation potential(b) for the valence band.The effects ofstrain become prominent as the mole fraction of In increases, changing the band effect ratio.diffrent level of strainenergy were built with different quantum well width. An increase in the quantum well width by only one monolayercan result in a large reduction in the transition energy.
  • 关键词:Quantum Well; transition energy; redshift; built-in-electric field; spontaneous polarization; piezoelectric;polarization.
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