期刊名称：International Journal of VLSI Design & Communication Systems
印刷版ISSN：0976-1527
电子版ISSN：0976-1357
出版年度：2015
卷号：6
期号：3
页码：41
DOI：10.5121/vlsic.2015.6304
出版社：Academy & Industry Research Collaboration Center (AIRCC)
摘要：In this paper, we propose and investigate a schottky tunneling source impact ionization MOSFET (STSIMOS)with enhanced device performance. STS-IMOS has silicide (NiSi) source to lower the breakdownvoltage of conventional impact ionization MOS (IMOS). There is cumulative effect of both impactionization and source induced tunneling for the current gating mechanism of the device. The silicide sourceoffers immensely low parasitic resistance subsequently there is an increment in voltage drop acrossintrinsic region. This leads to appreciable lowering of breakdown and threshold voltage for STS-IMOS.Hence, it demonstrates enhanced device performance over conventional IMOS. Besides this for STS-IMOSthe location of maximum electric field has shifted towards the source and now it is quite away from gateoxide. Hence, it shows high immunity against Vth fluctuations due to hot electron damage. Consequently, itis found that device reliability is also improved significantly.
