期刊名称：International Journal of VLSI Design & Communication Systems
印刷版ISSN：0976-1527
电子版ISSN：0976-1357
出版年度：2014
卷号：5
期号：3
页码：83
DOI：10.5121/vlsic.2014.5308
出版社：Academy & Industry Research Collaboration Center (AIRCC)
摘要：In this paper, electric field distribution of the junctionless dual material surrounding gate MOSFETs(JLDMSG) is developed. Junctionless is a device that has similar characteristics like junction baseddevices, but junctionless has a positive flatband voltage with zero electric field. In Surrounding gateMOSFETs gate material surrounds the channel in all direction , therefore it can overcome the shortchannel effects effectively than other devices. In this paper, surface potential and electric field distributionis modelled. The proposed surface potential model is compared with the existing central potential model. Itis observed that the short channel effects (SCE) is reduced and the performance is better than the existingmethod.
关键词：JLDMSG (Junctionless dual material surrounding gate) MOSFETs; DIBL; Short channel effects (SCE).
