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  • 标题:Analysis of CMOS and MTCMOS Circuits Using 250 Nano Meter Technology
  • 本地全文:下载
  • 作者:Suresh ; A K Panda ; Mukesh Sukla
  • 期刊名称:Computer Science & Information Technology
  • 电子版ISSN:2231-5403
  • 出版年度:2016
  • 卷号:6
  • 期号:9
  • 页码:41-51
  • DOI:10.5121/csit.2016.60905
  • 出版社:Academy & Industry Research Collaboration Center (AIRCC)
  • 摘要:The low-power consumption with less delay time has become an important issue in the recenttrends of VLSI. In these days, the low power systems with high speed are highly preferableeverywhere. Designers need to understand how low-power techniques affect performanceattributes, and have to choose a set of techniques that are consistent with these attributes .Themain objective of this paper is to describe, how to achieve low power consumption withapproximately same delay time in a single circuit. In this paper, we make circuits with CMOSand MTCMOS techniques and check out its power and delay characteristics. The circuitsdesigned using MTCMOS technique gives least power consumption.
  • 关键词:MTCMOS; sleep mode; leakage current; header switch; footer switch
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