期刊名称：International Journal of Electrical and Computer Engineering
电子版ISSN：2088-8708
出版年度：2018
卷号：8
期号：5
页码：2773-2779
DOI：10.11591/ijece.v8i5.pp2773-2779
语种：English
出版社：Institute of Advanced Engineering and Science (IAES)
摘要：Balanced amplifier is the structure proposed in this article, it provides better performance. In fact, the single amplifier meets the specification for noise figure and gain but fails to meet the return loss specification due to the large mis-matches on the input & outputs. To overcome this problem one solution is to use balanced amplifier topography. In this paper, a wide-band and high-gain microwave balanced amplifier constituted with branch line coupler circuit is proposed. The amplifier is unconditionally stable in the band [9-13] GHz where the gain is about 20dB. The input reflection (S11) and output return loss (S22) at 11 GHz are -33.4dB and -33.5dB respectively.
其他摘要：Balanced amplifier is the structure proposed in this article, it provides better performance. In fact, the single amplifier meets the specification for noise figure and gain but fails to meet the return loss specification due to the large mis-matches on the input & outputs. To overcome this problem one solution is to use balanced amplifier topography. In this paper, a wide-band and high-gain microwave balanced amplifier constituted with branch line coupler circuit is proposed. The amplifier is unconditionally stable in the band [9-13] GHz where the gain is about 20dB. The input reflection (S11) and output return loss (S22) at 11 GHz are -33.4dB and -33.5dB respectively.
关键词：LNA;Balanced amplifier technique;Branch line coupler;HEMT transistor;Matching network
