首页    期刊浏览 2024年11月28日 星期四
登录注册

文章基本信息

  • 标题:A Novel Design of a Microstrip Microwave Power Amplifier for DCS Application using Collector-feedback Bias
  • 其他标题:A Novel Design of a Microstrip Microwave Power Amplifier for DCS Application using Collector-feedback Bias
  • 本地全文:下载
  • 作者:Amine Rachakh ; Larbi El Abdellaoui ; Jamal Zbitou
  • 期刊名称:International Journal of Electrical and Computer Engineering
  • 电子版ISSN:2088-8708
  • 出版年度:2018
  • 卷号:8
  • 期号:3
  • 页码:1647-1653
  • DOI:10.11591/ijece.v8i3.pp1647-1653
  • 语种:
  • 出版社:Institute of Advanced Engineering and Science (IAES)
  • 摘要:This paper presents a 1.80GHz class-A Microwave power amplifier (PA). The proposed power amplifier is designed with single-stage architecture. This power amplifier consists of a bipolar transistor and improved by Collector-Feedback Biasing fed with a single power supply. The aim of this work is to improve the performance of this amplifier by using simple stubs with 50Ω microstrip transmissions lines. The proposed PA is investigated and optimized by utilizing Advanced Design System (ADS) software. The simulation results show that the amplifier achieves a high power gain of 13dB, output power rise up to 21dBm and good impedances matching ;For the input reflection coefficient (S11) is below than - 46.39dB . Regarding the output reflection coefficient (S22) is below than -29.898dB, with an overall size of about 93 x 59mm² .By the end; we find that this power amplifier offers an excellent performance for DCS applications.
  • 其他摘要:This paper presents a 1.80GHz class-A Microwave power amplifier (PA). The proposed power amplifier is designed with single-stage architecture. This power amplifier consists of a bipolar transistor and improved by Collector-Feedback Biasing fed with a single power supply. The aim of this work is to improve the performance of this amplifier by using simple stubs with 50Ω microstrip transmissions lines. The proposed PA is investigated and optimized by utilizing Advanced Design System (ADS) software. The simulation results show that the amplifier achieves a high power gain of 13dB, output power rise up to 21dBm and good impedances matching ;For the input reflection coefficient (S11) is below than - 46.39dB . Regarding the output reflection coefficient (S22) is below than -29.898dB, with an overall size of about 93 x 59mm² .By the end; we find that this power amplifier offers an excellent performance for DCS applications.
  • 关键词:Telecommunication; Electronics; Active device;Power Amplifier (PA) ;Microstrip technology; Bipolar Junction Transistors ; Matching Network (MN) ; Advanced Design System
国家哲学社会科学文献中心版权所有