期刊名称：International Journal of Electrical and Computer Engineering
电子版ISSN：2088-8708
出版年度：2018
卷号：8
期号：2
页码：954-962
DOI：10.11591/ijece.v8i2.pp954-962
语种：English
出版社：Institute of Advanced Engineering and Science (IAES)
摘要：This paper is mainly dedicated to understanding the phenomena governing the formation of two-dimensional electron gas confined in the quantum well which hold the role of the channel in the high electron density transistors (HEMT) based on AlGaN / GaN heterojunction. The theory takes into account: the crystal structure, the spontaneous and piezoelectric polarization concept, the formation mechanism of two-dimensional electron gas at the AlGaN / GaN interface, the approximate resolution of the Poisson and Schrödinger equations to determine the density of Two-dimensional electron gas after the analytical formula of the current-voltage characteristic is established. Our study is also concerned with the dependence of the two-dimensional electron gas density on the following technological parameters: Aluminum molare fraction, AlGaN layer thickness and AlGaN layer doping, In order to control the influence of these parameters on the device performance. Finally, the current-voltage characteristic which reflects the variation of the drain-source current as a function of the modulation of the gate voltage has been discussed.
其他摘要：This paper is mainly dedicated to understanding the phenomena governing the formation of two-dimensional electron gas confined in the quantum well which hold the role of the channel in the high electron density transistors (HEMT) based on AlGaN / GaN heterojunction. The theory takes into account: the crystal structure, the spontaneous and piezoelectric polarization concept, the formation mechanism of two-dimensional electron gas at the AlGaN / GaN interface, the approximate resolution of the Poisson and Schrödinger equations to determine the density of Two-dimensional electron gas after the analytical formula of the current-voltage characteristic is established. Our study is also concerned with the dependence of the two-dimensional electron gas density on the following technological parameters: Aluminum molare fraction, AlGaN layer thickness and AlGaN layer doping, In order to control the influence of these parameters on the device performance. Finally, the current-voltage characteristic which reflects the variation of the drain-source current as a function of the modulation of the gate voltage has been discussed.
