期刊名称：International Journal of Electrical and Computer Engineering
电子版ISSN：2088-8708
出版年度：2017
卷号：7
期号：1
页码：169-175
DOI：10.11591/ijece.v7i1.pp169-175
语种：English
出版社：Institute of Advanced Engineering and Science (IAES)
摘要：We present in this paper an analytical model of the current–voltage (I-V) characteristics for submicron GaAs MESFET transistors. This model takes into account the analysis of the charge distribution in the active region and incorporate a field depended electron mobility, velocity saturation and charge build-up in the channel. We propose in this frame work an algorithm of simulation based on mathematical expressions obtained previously. We propose a new mobility model describing the electric field-dependent. The predictions of the simulator are compared with the experimental data [01] and have been shown to be good.
其他摘要：We present in this paper an analytical model of the current–voltage (I-V) characteristics for submicron GaAs MESFET transistors. This model takes into account the analysis of the charge distribution in the active region and incorporate a field depended electron mobility, velocity saturation and charge build-up in the channel. We propose in this frame work an algorithm of simulation based on mathematical expressions obtained previously. We propose a new mobility model describing the electric field-dependent. The predictions of the simulator are compared with the experimental data [01] and have been shown to be good.
