摘要：Radiation damage in solid-state semiconductors has, until now, placed strict limitations on the acceptable decay energies of radioisotopes in radiovoltaic cells. Relegation to low-energy beta-emitting isotopes has minimized the power output from these devices and limited the technology’s ability to deliver greater energy densities and longer lifetimes than conventional batteries. We demonstrate the self-healing abilities of a liquid-phase semiconducting alloy which can withstand high-energy alpha radiation. Neutron diffraction of liquid selenium-sulfur shows the liquid phase repairing damage sustained in the irradiation of the solid phase. This self-healing behavior results in long-lived power output in a liquid selenium-sulfur alphavoltaic cell. To the best of our knowledge, this marks the only successful demonstration of resistance to high-energy radiation (>500 keV) in a semiconducting material. This new robustness can potentially allow increases to the available energy density in radiovoltaic cells near 1000 times the current state of the art.
