摘要：Hierarchical nanostructures are ideal architectures to harvest solar energy. The understanding of light absorption in single hierarchical structures is emergently important and greatly helpful in enhancing multiscale optical phenomena and light management. However, due to the geometrical complexity of hierarchical architectures, theoretical and experimental studies of light absorption have faced significant challenges. Here, we directly quantify light absorption in single hierarchical structures for the first time by utilizing VO2-based near field powermeter. It is found that light trapping is significantly enhanced in rough microwires when the roughness amplitude is comparable to the incident light wavelength. The roughness enhanced light absorption is verified as a general phenomenon on both VO2 and Si hierarchical structures. Therefore, our work not only provides a simple and quantitative method of measuring light absorption upon single geometrically complex structures in micro/nanoscale, but also contributes a general rule to rationally design of hierarchical structures for enhanced performance in photoelectric and photochemical applications.
