期刊名称：International Journal of Electrical and Computer Engineering
电子版ISSN：2088-8708
出版年度：2018
卷号：8
期号：2
页码：933-938
DOI：10.11591/ijece.v8i2.pp933-938
语种：English
出版社：Institute of Advanced Engineering and Science (IAES)
摘要：This paper presents a low-power D-Band amplifier suitable for ultrahigh-speed wireless communications. The three-stage fully differential amplifier with capacitive neutralization is fabricated in 40 nm CMOS provided by TSMC. Measurement results show that the D-band amplifier obtains a peak gain of 9.6 dB over a -3 dB bandwidth from 138 GHz to 164.5 GHz. It exhibits an output 1 dB compression point (OP1dB) of 1.5 dbm at the center frequency of 150 GHz. The amplifier consumes a low power of 27.3 mW from a 0.7 V supply voltage while its core occupies a chip area of 0.06 mm2.
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