期刊名称：Proceedings of the National Academy of Sciences
印刷版ISSN：0027-8424
电子版ISSN：1091-6490
出版年度：2018
卷号：115
期号：34
页码：8558-8562
DOI：10.1073/pnas.1806910115
语种：English
出版社：The National Academy of Sciences of the United States of America
摘要：We report anomalous physical properties of high-quality single-crystalline FeSi over a wide temperature range of 1.8–400 K. The electrical resistivity ρ(T) can be described by activated behavior with an energy gap Δ = 57 meV between 150 and 67 K, below which the estimated energy gap is significantly smaller. The magneto-resistivity and Hall coefficient change sign in the vicinity of 67 K, suggesting a change of dominant charge carriers. At ∼19 K, ρ(T) undergoes a cross-over from semiconducting to metallic behavior which is very robust against external magnetic fields. The low-temperature metallic conductivity depends strongly on the width/thickness of the sample. In addition, no indication of a bulk-phase transition or onset of magnetic order is found down to 2 K from specific heat and magnetic susceptibility measurements. The measurements are consistent with one another and point to complex electronic transport behavior that apparently involves a conducting surface state in FeSi at low temperatures, suggesting the possibility that FeSi is a 3D topological insulator.
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