期刊名称：International Journal of VLSI Design & Communication Systems
印刷版ISSN：0976-1527
电子版ISSN：0976-1357
出版年度：2013
卷号：4
期号：6
页码：27-34
DOI：10.5121/vlsic.2013.4603
出版社：Academy & Industry Research Collaboration Center (AIRCC)
摘要：For low power circuits downscaling of MOSFET has a major issue of scaling of voltage which has ceased after 1V. This paper highlights comparative study a nd analysis of pocket double gate tunnel FET (DGTFET) with MOSFET for low standby power logic ci rcuits. The leakage current of pocket DGTFET and MOSFET have been studied and the analysis resul ts shows that the pocket DGTFET gives the lower leakage current than the MOSFET. Further a pocket DGTFET inverter circuit is design in 32 nm technology node at V DD =0.6 V. The pocket DGTFET inverter shows the signi ficant improvement on the leakage power than multi-threshold CMOS (MTCMOS) in verter. The leakage power of pocket DGFET and MTCMOS inverter are 0.116 pW and 1.83 pW respective ly. It is found that, the pocket DGTFET can replace the MOSFET for low standby power circuits.
关键词：Pocket DGTFET; Band to Band Tunneling (BTBT); Leaka ge Current; MTCMOS Inverter
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