摘要：This research aims to establish a finite element analysis model of the polishing process of silicon carbide (SiC) ceramics and to study the change processes of the polishing force, which can lead to stress and strain inside SiC under different processing parameters. This will provide a more reasonable scheme for the actual processing of brittle materials. The simulation results indicate that the interference of the impact force can be effectively reduced by changing the abrasive particle size and polishing depth, and that the polishing force can be changed in a relatively stable range to improve the surface quality of the brittle material. Subsequently, polishing experiments are carried out in accordance with the computer-controlled precision polishing process. The experimental results reveal that the abrasive particle size and polishing depth are the most relevant factors for the minimization of surface roughness. In addition, the influence trends of surface quality of the experimental results at different process parameters match well with the simulation results. These research results are meaningful and helpful for the selection of reasonable polishing parameters in order to obtain good surface quality in the SiC polishing process.
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