期刊名称：IOP Conference Series: Earth and Environmental Science
印刷版ISSN：1755-1307
电子版ISSN：1755-1315
出版年度：2018
卷号：189
期号：5
页码：052072
DOI：10.1088/1755-1315/189/5/052072
语种：English
出版社：IOP Publishing
摘要：There is a phenomenon that the chips of press pack IGBT (Insulated Gate Bipolar Transistor) meet the requirements of withstand voltage test, but ignition sometimes occurred in the submodules of the same kind of press pack IGBT during the test. In response to this situation, this paper firstly analyzed that the difference of submodules frame lead to different level of electric field concentration. In this paper, quantitative conclusions have been drawed by modeling and simulation of the actual situation in COMSOL Multiphysics the multiphysics finite element simulation software.
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