文章基本信息
- 标题：Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices
- 本地全文：下载
- 作者：D. J. J. Loy ; P. A. Dananjaya ; X. L. Hong 等
- 期刊名称：Scientific Reports
- 电子版ISSN：2045-2322
- 出版年度：2018
- 卷号：8
- 期号：1
- 页码：14774
- DOI：10.1038/s41598-018-33198-0
- 语种：English
- 出版社：Springer Nature
- 摘要：. Further TEM studies also highlighted the difference in crystallinity between different materials in Ru/MgO/Cu RSM devices, confirming Cu filament identification which was found to be 10 nm in width.
