文章基本信息

标题：Theoretical predicted high-thermal-conductivity cubic Si3N4 and Ge3N4: promising substrate materials for high-power electronic devices
本地全文：下载
作者：Huimin Xiang ; Zhihai Feng ; Zhongping Li 等
期刊名称：Scientific Reports
电子版ISSN：2045-2322
出版年度：2018
卷号：8
期号：1
页码：14374
DOI：10.1038/s41598-018-32739-x
语种：English
出版社：Springer Nature
摘要：. The mechanism underpins the high RT κ is identified as relatively small anharmonicity, high phonon velocity and frequency. The suitability of these two nitrides as substrate materials was also discussed.