文章基本信息
- 标题：Electric-field-controlled interface dipole modulation for Si-based memory devices
- 本地全文：下载
- 作者：Noriyuki Miyata
- 期刊名称：Scientific Reports
- 电子版ISSN：2045-2322
- 出版年度：2018
- 卷号：8
- 期号：1
- 页码：8486
- DOI：10.1038/s41598-018-26692-y
- 语种：English
- 出版社：Springer Nature
- 摘要：and a wide memory window. Herein we describe the quasi-static and pulse response characteristics of multi-stacked IDM MOS capacitors and demonstrate flash-type and analog memory operations of an IDM FET device.
