摘要：Two yellow luminescence bands related to different defects have been revealed in undoped GaN grown by hydride vapor phase epitaxy (HVPE). One of them, labeled YL1, has the zero-phonon line (ZPL) at 2.57 eV and the band maximum at 2.20 eV at low temperature. This luminescence band is the ubiquitous yellow band observed in GaN grown by metalorganic chemical vapor deposition, either undoped (but containing carbon with high concentration) or doped with Si. Another yellow band, labeled YL3, has the ZPL at 2.36 eV and the band maximum at 2.09 eV. Previously, the ZPL and fine structure of this band were erroneously attributed to the red luminescence band. Both the YL1 and YL3 bands show phonon-related fine structure at the high-energy side, which is caused by strong electron-phonon coupling involving the LO and pseudo-local phonon modes. The shapes of the bands are described with a one-dimensional configuration coordinate model, and the Huang-Rhys factors are found. Possible origins of the defect-related luminescence bands are discussed.
