文章基本信息
- 标题：Author Correction: The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer
- 本地全文：下载
- 作者：Yeonwoo Shin ; Sang Tae Kim ; Kuntae Kim 等
- 期刊名称：Scientific Reports
- 电子版ISSN：2045-2322
- 出版年度：2018
- 卷号：8
- 期号：1
- 页码：7883
- DOI：10.1038/s41598-018-25896-6
- 语种：English
- 出版社：Springer Nature
- 摘要：A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has not been fixed in the paper.
