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  • 标题:Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor
  • 本地全文:下载
  • 作者:Toshiki Kanaki ; Hiroki Yamasaki ; Tomohiro Koyama
  • 期刊名称:Scientific Reports
  • 电子版ISSN:2045-2322
  • 出版年度:2018
  • 卷号:8
  • 期号:1
  • 页码:7195
  • DOI:10.1038/s41598-018-24958-z
  • 语种:English
  • 出版社:Springer Nature
  • 摘要:. This result mainly originates from the electric field modulation of the magnetic anisotropy of the GaMnAs ferromagnetic electrodes as well as the potential modulation of the nonmagnetic semiconductor GaAs channel layer. Our findings provide important progress towards high-performance vertical spin MOSFETs.
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