摘要：) covered a gold layer. It can be formed easily on Si substrate to function as an ultra-broadband, omnidirectional, and polarization-independent PMA by controlling the conditions of sputtering deposition and thermal annealing treatment. We experimentally realized an on-chip ultra-broadband PMA with almost 100% absorption spanned from UV-visible to NIR wavelength ranges. This cost-effective and high-efficiency approach would release the manufacturing barrier for previously reported PMAs and therefore open an avenue to the development of effectively energy harvesting, energy recycling, and heat liberation applications.
