摘要：and it is confirmed that the lower migration paths are three dimensional with the lowest activation energy of migration at 0.45 eV. Here we show that doping by Si on the Fe site is energetically favourable and an efficient way to introduce a high concentration of lithium vacancies. The introduction of Si increases the migration energy barrier of Li in the vicinity of the dopant to 0.59 eV. Nevertheless, the introduction of Si is positive for the diffusivity as the migration energy barrier increase is lower less than that of the lithium Frenkel process, therefore the activation energy of Li diffusion.
